This work reports on the growth of ZnO nanorods by simple thermal oxidation under air at 500°C of Zn and/or Zn‐Zn3N2 precursors thin films. These films were deposited by reactive magnetron sputtering in argon atmosphere for Zn films and in a mixture of Ar ‐ N2 for Zn‐Zn3N2. X‐ Rays diffraction (XRD) patterns of the precursors films showed the formation of both Zn and Zn3N2 phases before oxidation. However, after oxidation, X‐ray Photoelectron Spectroscopy (XPS) analysis revealed the disappearance of Zn3N2 phase. This method allowed us to prepare high‐density ZnO nanorods by oxidizing Zn‐Zn3N2 precursor films. Scanning Electron Microscopy (SEM) investigations revealed that the films prepared from Zn‐Zn3N2 showed higher density of nanorods and stronger photoluminescence with several mode phonon replicas at room temperature.

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