Estimations of Carrier Mobility and Trapped‐Carrier Density of States for Microcrystalline Silicon Semiconductors from Analysis of Field Dependent Steady‐State Photocarrier Grating Measurements Available to Purchase

The drift mobility for electrons and holes, small‐signal mobility lifetime product, trapped‐carrier density of states in addition to other correlated physical parameters of microcrystalline silicon sample are estimated from the analysis of field‐dependent experimental data using steady‐state photocarrier grating technique. The filed‐dependent experimental data at room temperature of the sample which was prepared by hot‐wire chemical vapor deposition (HWCVD) technique, are analyzed using different approaches based on small‐signal photocurrent. The exploitation of the electric‐field dependence in these approaches is correlating the photoelectronic properties, which are demonstrated by the transport parameters, to the trapped charge density which is usually not easily accessible. This may also justify the enhanced relationship between the minority carrier mobility‐lifetime product and trapped charge density and then the sub‐gap absorption in the sample under study.