We report on the characterization of Low‐Frequency (LF) noise in planar Double Gate MOSFETs with Independent Gates (IDG). The LF noise behavior in IDG n‐MOSFETs is well described by the correlated carrier number — mobility fluctuation model. LF noise characteristics indicate that this device can be a suitable candidate, not only for digital applications, but also for analog and RF applications.
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© 2007 American Institute of Physics.
2007
American Institute of Physics
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