Excess noise in carbon nanotube devices Available to Purchase

Low frequency noise measurements have been performed on Schottky‐Barrier Carbon Nanotube Field Effect Transistors and in random network of nanotubes (films) with different number of deposited layers. For SB‐CNFET the carrier number is calculated using an analytical model transport including Schottky barriers and the current‐voltage characteristics. The scaling of the 1/f noise with the gate bias allows the determination of the conductance fluctuation origin: carrier number (ΔN) or mobility (Δμ) fluctuations. Concerning random networks the 1/f noise amplitude depends on the nanotube arrangement. Then percolation theory is applied.