We present single dot spectroscopy of hexagonal GaN/AlN self‐assembled quantum dots (QDs) grown by MBE along the (0001) axis. The GaN quantum dots are grown on an AlN epilayer on Si (111) substrate, with dot densities between 108 and 1011 cm−2. We study the micro‐photoluminescence spectra of a few quantum dots. In the energy range corresponding to the smaller dots we observe several groups of peaks, each group corresponding to the emission of a unique quantum dot. These groups are identified through their time‐correlated spectral diffusion. The measured linewidth of the transition is 2 meV (resolution limited).
Micro‐photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron‐hole dipole
R. Bardoux, T. Guillet, P. Lefebvre, T. Taliercio, T. Bretagnon, B. Gil, F. Semond; Micro‐photoluminescence of isolated hexagonal GaN/AlN quantum dots : role of the electron‐hole dipole. AIP Conf. Proc. 10 April 2007; 893 (1): 941–942. https://doi.org/10.1063/1.2730203
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