Lateral tunneling Spectroscopy between two one‐dimensional (1D) electron waveguides (EWGs) in a GaAs/AlGaAs heterostructure is accomplished by preparing a thin barrier using atomic force microscope lithography. The barrier transmission and the 1D mode occupation in the EWGs are controlled by a top‐gate. Both 1D wires exhibits quantized conductance at 4.2K. At top‐gate voltages larger than the tunneling onset, the tunneling conductance as a function of the tunneling bias shows oscillations reflecting the density of states of the dual EWGs.

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