Conductance Quantisation In An Induced Hole Quantum Wire

We have fabricated and studied a ballistic one‐dimensional p‐type quantum wire using an undoped AlGaAs/GaAs structure. The absence of modulation doping eliminates long‐range disorder potential scattering and allows high carrier mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier‐carrier interactions are strongest. The device exhibits clear quantised conductance plateaus with highly stable gate characteristics.