Room temperature, continuous‐wave operation at 411 run wavelength of InGaN multi‐quantum wells laser diodes (LDs) made by plasma‐assisted molecular‐beam epitaxy (PAMBE) is demonstrated. The threshold current density and voltage of these LDs were 4.2 kA/cm2 and 5.3 V, respectively. High optical power output of 60 mW was achieved. The lifetime of PAMBE LDs exceeds 5 h for 2 mW of optical power. The LDs are grown on low dislocation density bulk GaN substrates covered by dynamically stable thin metal Ga and In layer. We demonstrate that relatively low growth temperatures (600°C – 720°C) pose no intrinsic limitations for fabrication of nitride based LDs by PAMBE.

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