High dopant activation and low damage p+ ultra‐shallow junctions (USJ) 15–20nm deep for 45nm node applications have been realized using B10H14 & B18H22 implant species along with flash, laser or SPE diffusion‐less activation annealing techniques. New USJ metrology techniques were employed to determine: 1) dopant activation level and 2) junction quality (residual implant damage) using both contact and non‐contact methods.

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