A new medium current ion implanter has been developed based on the EXCEED3000, which is highly reliable and widely used in 300mm fabs. The ion implanter now has to be designed so that it can precisely measure and control beam characteristics. For example beam angles have to be controlled in halo implantation because high tilt angle implantation is done according to the device geometric structure. Not only horizontal beam profile system but also vertical beam profile system are implemented in EXCEED3000AH‐G3 for the precise implantation control.

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