Strain‐Enhanced Activation of Sb Ultrashallow Junctions

Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained‐Si. Results show a modest Rs reduction for arsenic layers, a result of a strain‐induced mobility enhancement, whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. Tensile strain is shown to enhance the activation of dopant Sb whilst creating stable ultrashallow junctions when low‐temperature processing is employed. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultrashallow junctions for use with strain‐engineered CMOS devices.