To apply a multiply‐charged ion beam to device fabrication, it is indispensable to improve the beam current while also increasing the short lifetime of ion source caused by the wear‐out of the filament. The advantage of the indirectly heated cathode (IHC) configuration is well known as a means of extending the lifetime in a severe plasma environment. From this point of view, the IHC ion source, which is designed for the EXCEED2300 & 3000 series, has been developed to expand the capability of EXCEED series as the single wafer high energy ion implantation tool. We report the performance of IHC ion source with higher multiply‐charged ion beam current and longer lifetime than a Bernas type ion source.

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