Germanium is being investigated as an alternative channel material for mainstream CMOS. Although aspects of processing technology have similarities to silicon, ion implantation, and particularly the activation of dopants and removal of implant damage appear to be fundamentally different. In this paper we review some of the issues and present results that are encouraging in the context of PMOS devices.

Topics
Ion implantation, Chemical elements, Semiconductors
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© 2006 American Institute of Physics.
2006
American Institute of Physics
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