Single spin detection is one of the most challenging tasks towards the realization of a solid‐state‐based quantum information processor. Spin‐dependent (SD) processes in the random telegraph signal (RTS) observed in silicon MOSFETs may lead to quantum bit read‐out. In addition, if successful, SD‐RTS will allow a direct identification and microscopic characterization of the trap responsible for the RTS. The experiment and its interpretation present a number of technical difficulties and open issues.. We discuss our experimental results towards a deep understanding of spin‐dependent RTS aiming at shading light on several open questions related to the influence of the microwave field, the static magnetic field, and the effective temperature of the electron gas.
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14 November 2005
UNSOLVED PROBLEMS OF NOISE AND FLUCTUATIONS: UPoN 2005: Fourth International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology, and High Technology
6-10 June 2005
Gallipoli, Lecce (Italy)
Research Article|
November 14 2005
Random Telegraph Signal In Si n‐MOSFETs: A Way Towards Single Spin Resonance Detection
Marco Fanciulli;
Marco Fanciulli
1Laboratorio Nazionale Materiali e Dispositivi per la Microelettronica, Istituto Nazionale per la Fisica della Materia, Via Olivetti 2, I‐20041 Agrate Brianza, Italy
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Enrico Prati;
Enrico Prati
1Laboratorio Nazionale Materiali e Dispositivi per la Microelettronica, Istituto Nazionale per la Fisica della Materia, Via Olivetti 2, I‐20041 Agrate Brianza, Italy
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Giorgio Ferrari;
Giorgio Ferrari
2Dipartimento di Elettronica e Informazione, Politecnico di Milano, P.za Leonardo da Vinci 32, I‐20133 Milano, Italy
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Marco Sampietro
Marco Sampietro
2Dipartimento di Elettronica e Informazione, Politecnico di Milano, P.za Leonardo da Vinci 32, I‐20133 Milano, Italy
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AIP Conf. Proc. 800, 125–130 (2005)
Citation
Marco Fanciulli, Enrico Prati, Giorgio Ferrari, Marco Sampietro; Random Telegraph Signal In Si n‐MOSFETs: A Way Towards Single Spin Resonance Detection. AIP Conf. Proc. 14 November 2005; 800 (1): 125–130. https://doi.org/10.1063/1.2138603
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