The random telegraph signal (RTS) due to a defect at the Si/SiO2 interface in a silicon MOSFET is strongly affected by a static magnetic field. The characteristic capture and emission times vary because of the Zeeman splitting of the defect energy levels. We observe the change of the characteristic times of the RTS by monitoring the dc current in a MOSFET operated at He3 temperature in a static magnetic field up to 12 T parallel to the current flowing from source to drain.

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