Stationary and time‐resolved photoluminescence of GaN quantum dots grown by MBE in an AlN matrix have been studied. Temperature dependence of photoluminescence peak related to the quantum dots evidences in intrinsic nature of photoluminescence. A huge red shift of the photoluminescence peak in time‐resolved photoluminescence spectra has been attributed to redistribution of carriers between small and large quantum dots.
Origin of Below Band‐Gap Photoluminescence from GaN Quantum Dots in AlN Matrix
K. S. Zhuravlev, D. D. Ree, V. G. Mansurov, A. Yu. Nikitin, M. Teisseire, N. Grandjean, G. Neu, P. Tronc; Origin of Below Band‐Gap Photoluminescence from GaN Quantum Dots in AlN Matrix. AIP Conf. Proc. 30 June 2005; 772 (1): 719–720. https://doi.org/10.1063/1.1994308
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