The direct observation of Fermi‐edge effects in an in‐plane GaAs/AlGaAs tunneling structure consisting of a two‐dimensional electron gas as electrodes is reported. A one‐dimensional tunneling barrier has been fabricated using atomic force microscope lithography. The application of a bias across the potential barrier enables tunneling of electrons. The differential conductance vs. dc bias shows characteristic tunneling spectra with distinct features at biases corresponding to the Fermi energy.

This content is only available via PDF.
You do not currently have access to this content.