Different models for the GaSb‐(001) surface reconstruction have been proposed on the basis of experimental observations in typical GaSb growth conditions (V/III flux ratio > 1). We have analyzed their relative stability by means of first‐principles pseudopotential plane‐wave calculations. We constructed the surface phase diagram as a function of the chemical potential of the elemental constituents to mimic different growth conditions.

Topics
First-principle calculations, Phase transitions, Semiconductors, Surface physics
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© 2005 American Institute of Physics.
2005
American Institute of Physics
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