The spin injection process is studied in double quantum wells of ZnMnSe and ZnCdSe with a tunneling barrier by circularly‐polarized transient photoluminescence spectroscopy. The result shows two types of spin injections in the time ranges of 30 and 1000 ps. The observed spin injection processes are quantitatively interpreted by the individual tunneling of electrons and holes based on the rate equation analysis.

Topics
Quantum wells, Photoluminescence spectroscopy, Chemical reactions, Semiconductors
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© 2005 American Institute of Physics.
2005
American Institute of Physics
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