We report on the spin transport of photoexcited spin polarized electrons in n‐type GaAs under steady state conditions. Spin‐diffusion, ‐drift and ‐relaxation are measured via spatially resolved Faraday rotation. If strain is applied to the sample, spin precession is observed for strain is along [110], due to the k‐linear spin splitting induced by the off‐diagonal strain components. No significant effect is seen for strain along [100]. From the results, we obtain a spin splitting constant of C3 = 7.6 eVÅ. We believe that the described method for the determination of this constant is more direct than previously reported approaches. Spin transport is described theoretically in a drift‐diffusion model taking into account the D’yakonov‐Perel’ and Elliot‐Yafet spin relaxation mechanisms and the heating of the electron gas.
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30 June 2005
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27
26-30 July 2004
Flagstaff, Arizona (USA)
Research Article|
June 30 2005
Observation of spin diffusion, drift and precession in bulk n‐GaAs using a spatially resolved steady‐state technique
M. Beck;
M. Beck
*Erwin‐Rommel‐Str. 1, 91058 Erlangen, Germany
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C. Metzner;
C. Metzner
*Erwin‐Rommel‐Str. 1, 91058 Erlangen, Germany
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S. Malzer;
S. Malzer
*Erwin‐Rommel‐Str. 1, 91058 Erlangen, Germany
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G. H. Döhler
G. H. Döhler
*Erwin‐Rommel‐Str. 1, 91058 Erlangen, Germany
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AIP Conf. Proc. 772, 1385–1386 (2005)
Citation
M. Beck, C. Metzner, S. Malzer, G. H. Döhler; Observation of spin diffusion, drift and precession in bulk n‐GaAs using a spatially resolved steady‐state technique. AIP Conf. Proc. 30 June 2005; 772 (1): 1385–1386. https://doi.org/10.1063/1.1994630
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