Picosecond Raman Studies of Electron and Hole Velocity Overshoots In a GaAs‐based p‐i‐n Semiconductor Nanostructure Available to Purchase

Picosecond Raman spectroscopy has been employed to study electron and hole transport in a GaAs‐based p‐i‐n nanostructure. Electron as well hole velocity overshoots are observed. It has been demonstrated that due to the relatively long laser pulse used in the experiments the extent of overshoot is about the same in both cases.