Photomodulation Raman spectroscopy (PM‐RS) has been employed to investigate the effect of the interfacial minority carrier traps in metal: n‐type GaAs interfaces; using the forbidden LO phonon scattering as a prob. Photomodulating‐pumping beam (PMB) will decrease the interfacial field and consequently the intensity of forbidden LO scattering. Two molecular beam epitaxy junctions of 80 A° Au on n‐type GaAs (001) substrate with two different doping densities were used. The change in the band bending has been obtained as a function of the photomodulating intensity for the low doping case. The minority carrier’s lifetime was also determined through dynamical measurements for the PM‐RS intensity.

Topics
Doping, Semiconductors, Raman scattering spectroscopy, Epitaxy, Raman spectroscopy, Phonon scattering
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© 2005 American Institute of Physics.
2005
American Institute of Physics
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