Power conversion in a thermophotovoltaic (TPV) system can be accomplished with single p‐n junctions which are interconnected on‐wafer (monolithic interconnected module (MIM) approach) or off‐wafer (individual chip module approach) to form large area arrays. Using a MIM architecture, 0.6 eV InGaAs diodes grown lattice mismatched to InP have produced a power conversion efficiency of 23% and a power density of 0.65 W/cm2 at cell and radiator temperatures of 25°C and 1000°C, respectively. A shortcoming of a single p‐n junction is inefficient use of the incident spectrum due to over‐excitation losses from high, above bandgap energy photons. In order to overcome these losses, tandem TPV devices have been proposed which comprise two or more p‐n junctions of differing bandgaps. In this work we report on the growth, fabrication and characterization of InGaAsP/InGaAs (0.72/0.60 eV) tandem TPV diodes. Electrical measurements using a grey body source reveal an open circuit voltage of 0.504 V/cell and a fill factor of 72.3% at a short circuit current density of 0.069 A/cm2 and a cell temperature of 25°C.
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30 November 2004
THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY: Sixth Conference on Thermophotovoltaic Generation of Electricity: TPV6
14-16 June 2004
Freiburg (Germany)
Research Article|
November 30 2004
InGaAsP/InGaAs Tandem TPV Device
Richard R. Siergiej;
Richard R. Siergiej
1Bechtel Bettis, Inc., P.O. Box 79, West Mifflin, PA, 15122
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Samar Sinharoy;
Samar Sinharoy
2Essential Research Inc., 6410 Eastland Road, Suite D, Cleveland, OH, 44142
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Thomas Valko;
Thomas Valko
2Essential Research Inc., 6410 Eastland Road, Suite D, Cleveland, OH, 44142
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Rebecca J. Wehrer;
Rebecca J. Wehrer
1Bechtel Bettis, Inc., P.O. Box 79, West Mifflin, PA, 15122
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Bernard Wernsman;
Bernard Wernsman
1Bechtel Bettis, Inc., P.O. Box 79, West Mifflin, PA, 15122
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Samuel D. Link;
Samuel D. Link
1Bechtel Bettis, Inc., P.O. Box 79, West Mifflin, PA, 15122
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Robert W. Schultz;
Robert W. Schultz
1Bechtel Bettis, Inc., P.O. Box 79, West Mifflin, PA, 15122
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Rowan. L. Messham
Rowan. L. Messham
1Bechtel Bettis, Inc., P.O. Box 79, West Mifflin, PA, 15122
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AIP Conf. Proc. 738, 480–488 (2004)
Citation
Richard R. Siergiej, Samar Sinharoy, Thomas Valko, Rebecca J. Wehrer, Bernard Wernsman, Samuel D. Link, Robert W. Schultz, Rowan. L. Messham; InGaAsP/InGaAs Tandem TPV Device. AIP Conf. Proc. 30 November 2004; 738 (1): 480–488. https://doi.org/10.1063/1.1841927
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