0.52 eV InGaAs/InPAs Thermophotovoltaic (TPV) devices have been grown, fabricated, and characterized. High performance of this material system at this bandgap has been demonstrated for the first time. 57 μA/cm2 reverse saturation current density was measured along with 95% internal quantum efficiency. Due to the buffering design used, no dislocations were detected in the active region of the device by cross‐sectional transmission electron microscopy, suggesting defect densities < 107 cm−3 in this highly lattice mismatched (1.6%) material.
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© 2004 American Institute of Physics.
2004
American Institute of Physics
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