0.52 eV InGaAs/InPAs Thermophotovoltaic Cells

0.52 eV InGaAs/InPAs Thermophotovoltaic (TPV) devices have been grown, fabricated, and characterized. High performance of this material system at this bandgap has been demonstrated for the first time. 57 μA/cm² reverse saturation current density was measured along with 95% internal quantum efficiency. Due to the buffering design used, no dislocations were detected in the active region of the device by cross‐sectional transmission electron microscopy, suggesting defect densities < 10⁷ cm⁻³ in this highly lattice mismatched (1.6%) material.