Optical emission studies of the glow‐discharge deposition of a‐Si:H alloys reveal the presence of reactive species derived from process gases and impurities. Studies of the dependences of emission intensities upon depositon parameters elucidate the mechanisms of formation of these species. Effects of impurities detected by emission spectroscopy upon a‐Si:H film electronic properties are discussed. A model of the chemical reactions involved in film growth is presented.
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© 1981 American Institute of Physics.
1981
American Institute of Physics
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