Conditions for obtaining efficient near infrared luminescence at 1.54 μm of Er3+ ions in 6H SiC are studied. It is shown that implantation of Er at elevated temperature is essential for the emission intensity. An evidence is presented that N‐donors act as luminescence sensitizers at low temperatures. Codoping with oxygen does not increase the Er emission. Our data suggest that O atoms form all the emitting Er‐related centres.

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