Implanted p⁺n‐Junctions in Silicon Carbide

Ion implantation is considered a key technology for the realisation of silicon carbide electronic devices. Here we will give an overview of the field and present some recent results of ion implanted 4H SiC epitaxial layers. Mainly Al ions of keV energies have been used at different fluence, flux and target temperature. The samples have been investigated by secondary ion mass spectrometry (SIMS), channeling Rutherford backscattering (RBS‐c) and transmission electron microscopy (TEM), both as‐implanted and after annealing up to 1900 °C. Also the electrical activation of Al‐implanted and annealed material has been investigated by scanning spreading resistance microscopy (SSRM). The damage accumulation, monitored by RBS‐c, is linear with ion fluence but depends strongly on implantation temperature and ion flux. Annealing at temperatures above 1700 °C is needed to remove the damage and to electrically activate implanted Al ions. At these high annealing temperatures, however, dislocation loops are formed that have a negative influence on device performance.