Present status of experimental S-band GaAs-photogun driven by the solid state GaAs pulse laser Available to Purchase

This paper concerns the present status of experimental RF-photogun at BINP (Novosibirsk). The bulk GaAs-photocathode to investigate some none well-known phenomenon on the photocathode surface in high RF-field is used. An interesting question concerned with S-band photogun is to achieve bright beam with high level of polarization. For this goal two solid state GaAs lasers (SSL) at 820 nm wavelength with 2–4 W power and pulse duration on 2 μs and 200 ps were designed and produced.