We summarize here a comparison of laser and pulsed electron‐beam annealing (PEBA) of amorphous Ge and si layers evaporated on single‐crystal substrates. The annealing characteristics were analyzed by MeV 4He+ backscattering spectrometry and TEM. It was found that both techniques are capable of inducing epitaxy, but at present pulsed electron beam annealing seems to offer better annealing beam uniformity over a relatively large area.

Topics
Crystal structure, Annealing, Spectrometry, Electron beams
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© 1979 American Institute of Physics.
1979
American Institute of Physics
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