Most modeling and experimental characterization of interconnect reliability is focussed on simple straight lines terminating at pads or vias. However, laid-out integrated circuits often have interconnects with junctions and wide-to-narrow transitions. In carrying out circuit-level reliability assessments it is important to be able to assess the reliability of these more complex shapes, generally referred to as ‘trees.’ An interconnect tree consists of continuously connected high-conductivity metal within one layer of metallization. Trees terminate at diffusion barriers at vias and contacts, and, in the general case, can have more than one terminating branch when they include junctions. We have extended the understanding of ‘immortality’ demonstrated and analyzed for straight stud-to-stud lines, to trees of arbitrary complexity. This leads to a hierarchical approach for identifying immortal trees for specific circuit layouts and models for operation. To complete a circuit-level-reliability analysis, it is also necessary to estimate the lifetimes of the mortal trees. We have developed simulation tools that allow modeling of stress evolution and failure in arbitrarily complex trees. We are testing our models and simulations through comparisons with experiments on simple trees, such as lines broken into two segments with different currents in each segment. Models, simulations and early experimental results on the reliability of interconnect trees are shown to be consistent.
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3 November 1999
The fifth international workshop on stress induced phenomena in metallization
23-25 June 1999
Stuttgart (Germany)
Research Article|
November 03 1999
Modeling and experimental characterization of electromigration in interconnect trees Available to Purchase
C. V. Thompson;
C. V. Thompson
Department of Materials Science and Engineering, M.I.T., Cambridge, Massachusetts 02139
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S. P. Hau-Riege;
S. P. Hau-Riege
Department of Materials Science and Engineering, M.I.T., Cambridge, Massachusetts 02139
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V. K. Andleigh
V. K. Andleigh
Department of Materials Science and Engineering, M.I.T., Cambridge, Massachusetts 02139
Search for other works by this author on:
C. V. Thompson
Department of Materials Science and Engineering, M.I.T., Cambridge, Massachusetts 02139
S. P. Hau-Riege
Department of Materials Science and Engineering, M.I.T., Cambridge, Massachusetts 02139
V. K. Andleigh
Department of Materials Science and Engineering, M.I.T., Cambridge, Massachusetts 02139
AIP Conf. Proc. 491, 62–73 (1999)
Citation
C. V. Thompson, S. P. Hau-Riege, V. K. Andleigh; Modeling and experimental characterization of electromigration in interconnect trees. AIP Conf. Proc. 3 November 1999; 491 (1): 62–73. https://doi.org/10.1063/1.59926
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