$C59N$ on silicon surfaces: monomers, dimers and multilayers

We have investigated the adsorption of $C59N$ on the $Si(111)−7×7$ surfaces using ultra-high vacuum scanning tunnelling microscopy. For coverages of $C59N$ close to a monolayer a disordered layer is adsorbed directly on the Si surface. Following the deposition of more $C59N$ small islands are formed indicating that $C59N$ may diffuse on the adsorbed monolayer. There is some evidence for hexagonal ordering in the islands. The higher adsorbed layers may be desorbed by annealing at ∼400 °C leaving a $C59N$ monolayer. We also discuss the deposition of $C59N$ and $C60$ on this annealed monolayer.