Doping dependence of electronic structure in Bi2Sr2CaCu2O8+x

Onellion, M.; Christensen, S.; Frazer, B.; Gatt, R.; Kelley, R. J.; Misra, S.; Schmauder, T.; Berger, H.; Grioni, M.; Margaritondo, G.; Vobornik, I.; Zwick, F.; Möâle, M.; Kleiner, R.; Müller, P.

doi:10.1063/1.59632

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Research Article| September 01 1999

Doping dependence of electronic structure in ${Bi}_{2} {Sr}_{2} {CaCu}_{2} O_{8+x}$

M. Onellion;

M. Onellion

1Physics Department, University of Wisconsin, Madison, Wisconsin 53706

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S. Christensen;

S. Christensen

1Physics Department, University of Wisconsin, Madison, Wisconsin 53706

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B. Frazer;

B. Frazer

1Physics Department, University of Wisconsin, Madison, Wisconsin 53706

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R. Gatt;

R. Gatt

1Physics Department, University of Wisconsin, Madison, Wisconsin 53706

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R. J. Kelley;

R. J. Kelley

1Physics Department, University of Wisconsin, Madison, Wisconsin 53706

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S. Misra;

S. Misra

1Physics Department, University of Wisconsin, Madison, Wisconsin 53706

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T. Schmauder;

T. Schmauder

1Physics Department, University of Wisconsin, Madison, Wisconsin 53706

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H. Berger;

H. Berger

2Institut de Physique Appliquée, École Polytechnique Fédérale Lausanne, Lausanne, Switzerland

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M. Grioni;

M. Grioni

2Institut de Physique Appliquée, École Polytechnique Fédérale Lausanne, Lausanne, Switzerland

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G. Margaritondo;

G. Margaritondo

2Institut de Physique Appliquée, École Polytechnique Fédérale Lausanne, Lausanne, Switzerland

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I. Vobornik;

I. Vobornik

2Institut de Physique Appliquée, École Polytechnique Fédérale Lausanne, Lausanne, Switzerland

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F. Zwick;

F. Zwick

2Institut de Physique Appliquée, École Polytechnique Fédérale Lausanne, Lausanne, Switzerland

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M. Möâle;

M. Möâle

3Physikalisches Institut III, Universität Erlangen-Nümberg, D-91058 Erlangen, Germany

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R. Kleiner;

R. Kleiner

3Physikalisches Institut III, Universität Erlangen-Nümberg, D-91058 Erlangen, Germany

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P. Müller

3Physikalisches Institut III, Universität Erlangen-Nümberg, D-91058 Erlangen, Germany

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AIP Conf. Proc. 483, 304–309 (1999)

https://doi.org/10.1063/1.59632

We report on angle-resolved photoemission and superconductor-insulator-superconductor tunneling measurements of the normal and superconducting states of ${Bi}_{2} {Sr}_{2} {CaCu}_{2} O_{8+x}$ single crystal samples and ${Bi}_{2} {Sr}_{2} {CaCu}_{2} O_{8+x}$ -native oxide-lead (S-I-S) tunnel junctions.(1–7).

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1999

American Institute of Physics

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Doping dependence of electronic structure in ${Bi}_{2} {Sr}_{2} {CaCu}_{2} O_{8+x}$

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