We have studied efficient p-on-n homo- (InGaAsSb/GaSb) and hetero-junction (InGaAsSb/AlGaAsSb/GaSb) thermophotovoltaic (TPV) cells with respect to the recombination velocity at the cap-layer/emitter interface, S. In both cell types the open-circuit voltage, and the short-circuit current, have about the same sensitivity to S. The dark current, is the most sensitive of all. An examination of the essential factors in the one-dimensional minority-carrier diffusion model shows that under short-circuit conditions, photogenerated electrons diffuse rapidly away from the interface to the junction, whereas under open-circuit conditions, they remain in the emitter for a much longer bulk-recombination time, and therefore, they are more likely to recombine at the interface. A factor of 2.2 increase in S from 2.5 to produces a 25-mV decrease in a 12-percent decrease in or quantum efficiency, and a factor of two increase in This work points out the critical importance of interfacial recombination even in efficient TPV cells.
Skip Nav Destination
Article navigation
10 March 1999
Fourth NREL conference on thermophotovoltaic generation of electricity
11-14 Oct 1998
Denver, Colorado (USA)
Research Article|
March 10 1999
Interfacial recombination in In(Al)GaAsSb/GaSb thermophotovoltaic cells
V. B. Khalfin;
V. B. Khalfin
Sarnoff Corporation, CN 5300, Princeton, New Jersey 08543-5300
Search for other works by this author on:
D. Z. Garbuzov;
D. Z. Garbuzov
Sarnoff Corporation, CN 5300, Princeton, New Jersey 08543-5300
Search for other works by this author on:
H. Lee;
H. Lee
Sarnoff Corporation, CN 5300, Princeton, New Jersey 08543-5300
Search for other works by this author on:
G. C. Taylor;
G. C. Taylor
Sarnoff Corporation, CN 5300, Princeton, New Jersey 08543-5300
Search for other works by this author on:
N. Morris;
N. Morris
Sarnoff Corporation, CN 5300, Princeton, New Jersey 08543-5300
Search for other works by this author on:
R. U. Martinelli;
R. U. Martinelli
Sarnoff Corporation, CN 5300, Princeton, New Jersey 08543-5300
Search for other works by this author on:
J. C. Connolly
J. C. Connolly
Sarnoff Corporation, CN 5300, Princeton, New Jersey 08543-5300
Search for other works by this author on:
AIP Conf. Proc. 460, 247–255 (1999)
Citation
V. B. Khalfin, D. Z. Garbuzov, H. Lee, G. C. Taylor, N. Morris, R. U. Martinelli, J. C. Connolly; Interfacial recombination in In(Al)GaAsSb/GaSb thermophotovoltaic cells. AIP Conf. Proc. 10 March 1999; 460 (1): 247–255. https://doi.org/10.1063/1.57804
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Inkjet- and flextrail-printing of silicon polymer-based inks for local passivating contacts
Zohreh Kiaee, Andreas Lösel, et al.
Effect of coupling agent type on the self-cleaning and anti-reflective behaviour of advance nanocoating for PV panels application
Taha Tareq Mohammed, Hadia Kadhim Judran, et al.
Design of a 100 MW solar power plant on wetland in Bangladesh
Apu Kowsar, Sumon Chandra Debnath, et al.
Related Content
Minority-carrier transport in InGaAsSb thermophotovoltaic diodes
AIP Conference Proceedings (March 1997)
The quantum efficiency of InGaAsSb thermophotovoltaic diodes
AIP Conference Proceedings (January 1998)
A novel approach for the improvement of open circuit voltage and fill factor of InGaAsSb/GaSb thermophotovoltaic cells
AIP Conference Proceedings (January 1998)
Improvements in GaSb-based thermophotovoltaic cells
AIP Conference Proceedings (March 1997)
Al x Ga 1−x Sb window layers for InGaAsSb/GaSb thermophotovoltaic cells
AIP Conference Proceedings (March 1999)