Investigate behaviour of field plate on e-mode AlGaN/GaN MISHEMT devices for power devices application Available to Purchase

As a wide-bandgap material, Gallium-Nitride (GaN) has become one of the preferred materials for high- temperature, high-frequency, and high-power devices, which is desirable in Aluminium-Gallium-Nitride / Gallium-Nitride High Electron Mobility Transistors (AlGaN/GaN HEMT), which are highly demanded towards combating climate issues. Furthermore, its excellent characteristics are advantageous for Two-Dimensional-Electron-Gas (2DEG) without doping. In this study, the field plate impact on Enhancement-mode GaN-based Metal-Insulation-Semiconductor HEMT (E-mode GaN MISHEMT) was investigated using Silvaco TCAD Software. It was found that the breakdown voltage (BV) of the E- mode GaN MISHEMT device without a field plate of around 600 V, and a higher electric field at the gate edge affects the GaN MISHEMT device’s reliability issue. Therefore, different types of field plates were introduced, which are gate field plate, source field plate, drain field plate, and dual field plates, and then, the suitable field plate for the MISHEMT devices was determined. It was observed that the breakdown voltage of the gate field plate, source field plate, and drain field plate showed around 770 V, 790 V, and 990 V, respectively, where the gate field plate revealed a lower electric field at the gate edge. However, the dual field plates (source+drain) and (gate+drain) showed BV around 1125 V and 1140 V, respectively, with a lower electric field at the gate edge. Moreover, none of the field plate configurations influence the characteristics curve of the devices.