The exponential increase in electrical energy demand has raised the need for renewable energy and energy-efficient devices. Indium gallium nitride (InGaN) alloys with direct and tunable bandgap from 0.70 eV to 3.42 eV, which can cover the whole solar spectrum, are promising materials for high-efficiency solar cells. However, this application is confronted with the difficulty of producing good quality indium (In)-rich and p-type InGaN epilayers. This article will first present an overview of the InGaN semiconductor characteristics that make it suitable for high-efficiency solar cell applications. Next, the key challenges for producing high-quality In-rich and p-type InGaN epitaxial films will be discussed. Finally, the recent development of InGaN epitaxial growth and the research on InGaN-based solar cells at the Institute of Nano Optoelectronics Research and Technology will be presented.
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