The paper presents the procedure of Praseodymium (Pr) doping at 1000 and 2000 wt. ppm by ion implantation into 65 Sb2O3 − 25 PbCl2 − 10 LiCl and 60 PbO – 40 GaO3/2 glasses prepared by the melting-quenching method. The implanted layer thickness was 250 nm. The luminescence properties have been determined across the spectral range of 400-800 nm and the impact of Praseodymium (Pr) implantation on the optical and electrical properties of the glasses was investigated. The observed luminescence signal was relatively weak. The characteristic Pr3+ emission bands were observed at ∼488, 608, and 650 nm. The electric conductivity of modified layers was characterized using the Van der Pawn method and the obtained results are discussed. It was found that the DC conductivity of the prepared annealed layers increases with applied fluences of Pr used during ion implantation.

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