This research work aims to improve the V-I characteristics of a CNTFET (Carbon Nanotube Field Effect Transistor) having Al2O3 (Aluminium oxide) and compare SiO2 (Silicon dioxide) as oxide material by varying the Source/Drain (S/D) length by using nanohub. Al2O3 and SiO2 were chosen as two groups, consisting of 26 samples each. The sample size was calculated with the G power of 80 % and alpha value is 0.05. These V - I characteristics were simulated by varying the Source / Drain of the CNTFET materials using the CNTFET lab tool in NANOHUB. The materials Al2O3 and SiO2 as oxide material have the maximum drain current for 2.5 nm S/D length as 8.862 x 10−7A and 9.332 x 10−7A respectively. The Independent T test was done which reveals that the Al2O3 was found to be statistically significant as 0.000 (p < 0.05). This analysis found that Al2O3 based Novel CNTFET has significantly better voltage current characteristics compared with SiO2 based CNTFET.

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