This research work aims to improve the V-I characteristics of a CNTFET (Carbon Nanotube Field Effect Transistor) having Al2O3 (Aluminium oxide) and compare SiO2 (Silicon dioxide) as oxide material by varying the Source/Drain (S/D) length by using nanohub. Al2O3 and SiO2 were chosen as two groups, consisting of 26 samples each. The sample size was calculated with the G power of 80 % and alpha value is 0.05. These V - I characteristics were simulated by varying the Source / Drain of the CNTFET materials using the CNTFET lab tool in NANOHUB. The materials Al2O3 and SiO2 as oxide material have the maximum drain current for 2.5 nm S/D length as 8.862 x 10−7A and 9.332 x 10−7A respectively. The Independent T test was done which reveals that the Al2O3 was found to be statistically significant as 0.000 (p < 0.05). This analysis found that Al2O3 based Novel CNTFET has significantly better voltage current characteristics compared with SiO2 based CNTFET.
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30 August 2024
PROCEEDINGS OF 5TH INTERNATIONAL CONFERENCE ON SUSTAINABLE INNOVATION IN ENGINEERING AND TECHNOLOGY 2023
16 August 2023
Kuala Lumpur, Malaysia
Research Article|
August 30 2024
Improving the V-I characteristics of Al2O3 based CNTFET and comparing with SiO2 based CNTFET by varying source/drain length
B. Indra Sena Kumar;
B. Indra Sena Kumar
a)
1
Department of Electronics and Communication Engineering, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences, Saveetha University
, Chennai, Tamil Nadu, 602105 India
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B. Yakkala;
B. Yakkala
b)
1
Department of Electronics and Communication Engineering, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences, Saveetha University
, Chennai, Tamil Nadu, 602105 India
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V. Thiruchelvam;
V. Thiruchelvam
c)
2
School of Engineering, Asia Pacific University
, 57000, Kuala Lumpur, Malaysia
c)Corresponding author: dr.vinesh@apu.edu.my
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Y. Susiapan
Y. Susiapan
d)
2
School of Engineering, Asia Pacific University
, 57000, Kuala Lumpur, Malaysia
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c)Corresponding author: dr.vinesh@apu.edu.my
AIP Conf. Proc. 3161, 020081 (2024)
Citation
B. Indra Sena Kumar, B. Yakkala, V. Thiruchelvam, Y. Susiapan; Improving the V-I characteristics of Al2O3 based CNTFET and comparing with SiO2 based CNTFET by varying source/drain length. AIP Conf. Proc. 30 August 2024; 3161 (1): 020081. https://doi.org/10.1063/5.0229236
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