Hybrid organic-inorganic ZnO/PCBM electron transport layer with perovskite solar cell material CH₃NH₃PbI₃ in numerical simulation with SCAPS

This paper presents a photovoltaic device model of perovskite materials with (p-i-n) configuration for numerical simulation using the Solar Cell Capacitance Simulator (SCAPS) package software. The PV research community can use SCAPS, a thin film solar cell numerical device simulator, free of cost. This study illustrates the ideal behaviour of different thicknesses of polycrystalline thin film perovskite solar cells. To fabricate perovskite solar cells with high efficiency and reasonable material parameter selection, this simulation study will be helpful. The P-type layer is made of hole transport materials, HTM, as a Poly(3-hexylthiophene-2,5-diyl) polymer, P3HT, and the intrinsic layer is CH₃NH₃PbI₃ perovskite and the n-type layer is composed of two layers of ZnO_1.5-x /PCBM_x, Zink oxide(ZnO), and [6,6]-Phenyl-C₆₁ butyric acid methyl ester (PCBM), respectively, where x is the thickness of the PCBM. The performance parameters of solar cells, capacitance, conductance and impedance were studied under variable thickness (x=0, 0.3, 0.6, 0.9, 1.2, 1.5) µm with fixation of the parameters and other conditions in the simulation calculation process. The best performance of the solar cell in the simulation models was obtained when the electron transport materials, ETM, layer was composed of ZnO only, x=0 µm, under solar radiation intensity of 1000 W/m².