The aim of the project is to improve the V-I characteristics of drain current with Gallium trioxide (Ga2O3) and Silicon dioxide (SiO2) material by reducing the top gate voltage of planar CNTFET. The novel Gallium trioxide and Silicon dioxide material were chosen as a group having 20 samples per group respectively. Samples were calculated by using Clincalc analysis by keeping threshold energy 0.05%, G power is 80% and the confidence interval is 95%. Maximum accepted error is fixed is 0.05 and beta is 0.2. A DFT tool is used to perform the drain current by changing top gate voltage. The independent t-test was done which revealed the Gallium trioxide of a CNTFET and obtained 95% when compared with the silicon material of CNTFET and obtained the significant value P = 0.23. There is no significant difference between the two groups p > 0.05. The analysis found that G allium trioxide appears to be better Silicon dioxide from drain current. Silicon dioxide has better V-I characteristics of a drain current compared with Gallium trioxide.

Topics
Field effect transistors, Oxides, Threshold energy, Chemical elements, Silicates, Statistical analysis
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