In this paper, some changes carried out in the LDMOS known as MOSFET1 by utilizing trench known as MOSFET2. In the proposed device silicon material acts as channel material and the gate electrode is placed in oxide trenches. The drain contact is positioned at the centre and the sources are located at the edges. In the MOSFET2, two gates creating the two channels. Channels acts together so produce large gain, current, and voltage need for the power IC. An extension in breakdown occurs due to the RESURF in MOSFET2. With the help of simulator the performance are analysed with that of the MOSFET1. The MOSFET2 gives 111% improvement in gain, 12% decrease the threshold-voltage, 2 times higher output current in comparison with the MOSFET1. The performance of the MOSFETs is investigated by device simulator ATLAS. The proposed device is suitable for analog applications.

Topics
Electrical properties and parameters, Field effect transistors, Chemical elements
1.
W. S.
Son
,
Y. H.
Sohn
, and
S. Y.
Choi
,
Microelectronics Journal
35
,
393
–
400
, (
2004
).
https://doi.org/10.1016/j.mejo.2004.02.001
Google Scholar
Crossref
Search ADS
 
2.
R. S.
Saxena
, and
M. J.
Kumar
,
IEEE Trans. Electron Devices
56
,
1355
–
1359
, (
2009
).
https://doi.org/10.1109/TED.2009.2019371
Google Scholar
Crossref
Search ADS
 
3.
M.
Bawedin
,
C.
Renaux
, and
D.
Flandre
,
Solid State Electron.
48
,
2263
–
2270
, (
2004
).
https://doi.org/10.1016/j.sse.2004.06.007
Google Scholar
Crossref
Search ADS
 
4.
Z.
Wang
,
B.
Zhang
,
Q.
Fu
,
G.
Xie
, and
Z.
Li
,
IEEE Electron Device Lett.
33
,
703
–
705
, (
2012
).
https://doi.org/10.1109/LED.2012.2188091
Google Scholar
Crossref
Search ADS
 
5.
X.
Luo
,
J.
Fan
,
Y.
Wang
,
T.
Lei
,
M.
Qiao
,
B.
Zhang
, and
F.
Udrea
,
IEEE Electron Device Lett.
32
,
185
–
187
, (
2011
).
https://doi.org/10.1109/LED.2010.2090938
Google Scholar
Crossref
Search ADS
 
6.
N.
Fujishima
,
A.
Sugi
,
S.
Kajiwara
,
Y. N. Kunio
Matsubara
, and
C. A. T.
Salama
,
IEEE Trans. Electron Devices
49
,
1462
–
1468
, (
2002
).
https://doi.org/10.1109/TED.2002.801434
Google Scholar
Crossref
Search ADS
 
7.
T.
Erlbacher
,
A. J.
Bauer
, and
L.
Frey
,
IEEE Electron Device Lett.
31
,
464
–
466
, (
2010
).
https://doi.org/10.1109/LED.2010.2043049
Google Scholar
Crossref
Search ADS
 
8.
X.
Luo
,
T. F.
Lei
,
Y. G.
Wang
,
G. L.
Yao
,
Y. H.
Jiang
,
K.
Zhou
,
P.
Wang
,
Z. Y.
Zhang
,
J.
Fan
,
Q.
Wang
,
B. Z. R.
Ge
,
Z.
Li
, and
F.
Udrea
59
,
504
–
509
, (
2012
).
9.
M. J.
Kumar
 and
R.
Sithanandam
,
IEEE Trans. Electron Devices
57
,
1719
–
1724
, (
2010
).
https://doi.org/10.1109/TED.2010.2049209
Google Scholar
Crossref
Search ADS
 
10.
B.
Duan
, and
Y.
Yang
,
IEEE Trans. Electron Devices
7
(
58
),
205760
, (
2011
).
Google Scholar
 
11.
X.
Luo
,
T. F.
Lei
,
Y. G.
Wang
,
G. L.
Yao
,
Y. H.
Jiang
,
K.
Zhou
,
P.
Wang
,
Z. Y.
Zhang
,
J.
Fan
,
Q.
Wang
,
R.
Ge
,
B.
Zhang
,
Z.
Li
, and
F.
Udrea
,
IEEE Trans. Electron Devices
2
(
59
),
5049
, (
2012
).
Google Scholar
 
12.
T.
Erlbacher
,
A. J.
Bauer
, and
L.
Frey
,
IEEE Electron Device Lett.
5
(
31
),
4646
, (
2010
).
Google Scholar
 
13.
S. L.
Tripathi
,
P.
Pathak
,
A.
Kumar
 and
S.
Saxena
,
Silicon
,
1
–
11
, (
2022
).
14.
M. S.
Adhikari
,
R.
Patel
,
S. L.
Tripathi
 and
Y.
Singh
,
Indian Journal of Pure & Applied Physics
58
,
678
–
685
, (
2020
).
Google Scholar
 
15.
S. L.
Tripathi
,
S. K.
Sinha
,
G. S.
Patel
 and
S.
Awasthi
,
IEEE Electron Devices Kolkata Conference (EDKCON)
,
161
–
165
(
2018
).
16.
N.
Mendiratta
,
S. L.
Tripathi
,
S. K.
Padmanaban
, and
E.
Hossain
,
Applied Sciences
7
(
10
),
1
–
11
, (
2020
).
Google Scholar
 
17.
M.
Ishfaq
,
M. R.
Khan
,
A.
Ali
,
S.
Bhardwaj
,
C.
Cepek
, and
A. S.
Bhatti
,
Materials Science in Semiconductor Processing
63
,
107
–
114
, (
2017
).
https://doi.org/10.1016/j.mssp.2017.02.009
Google Scholar
Crossref
Search ADS
 
18.
“ATLAS user’s manual: Device simulation software,
Silvaco Int.
,
Santa Clara, CA
,” (
2015
).
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