PN-junction based nano transistors for low power applications Available to Purchase

Major issues faced by the Tunneling Field-Effect Transistor (TFET) are lower on-current, higher subthreshold swing, and the nature of ambipolarity. Here, we have engineered a single junction-based p-n TFET that can mitigate all the challenges addressed along with the ease of fabrication. The maximum on-current of 79.70 µA/μm, and a subthreshold swing of 32.88 mV/decade were achieved for a gate-length of 120 nm which is well suited for low power applications. The effect of each geometrical parameter was studied keeping higher on current as of the main key parameter. All the electrical parameters of the proposed architecture are found to be comparable with the conventional p-i-n based TFET. The proposed device has been designed using the Sentaurus TCAD tool.