A study of neutron‐induced displacement damage effects as a function of temperature is reported for n‐channel, 2‐μm channel length, depletion mode junction‐field‐effect‐transistor (JFETs) fabricated on 6H‐silicon carbide (SiC). Very little effect on the electrical characteristics of the devices was observed for neutron fluences less than 1015 n/cm2 and the effect for fluences greater than 1015 n/cm2 became less significant with increasing temperature. The results offer promise for SiC devices to be used in applications which combine high‐temperature and radiation environments, where Si and GaAs technologies are limited.

Topics
Electrical properties and parameters, Field effect transistors, Neutron fluence, Carbides, Semiconductors
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© 1993 American Institute of Physics.
1993
American Institute of Physics
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