In this paper, the influence of the ultrahigh frequency (microwave) electromagnetic field on the VAC of tunnel diodes was studied. The effect of thermal emission current on the change in the ratio of tunnel currents at depth and the peak formed in the tunnel diode as a result of a strong electromagnetic field and on the change in the ratio of tunnel currents at the highest and lowest points without the influence of a strong electromagnetic field.

1.
G.
Gulyamov
and
A. G.
Gulyamov
,
Semiconductors
,
49
,
819
822
(
2015
).
2.
Y.
Yan
,
Silicon-Based Tunnel Diode Technology
(researchgate.net),
2008
,
22
23
.
3.
P. E.
Thompson
,
K. D.
Hobart
,
M. E.
Twigg
,
S. L.
Rommel
,
N.
Jin
,
P. R.
Berger
,
R.
Lake
,
A. C.
Seabaugh
,
P. H.
Chi
and
D. S.
Simon
,
Thin Solid Films
,
380
,
145
150
(
2000
).
4.
N.
Jin
,
S-Y
Chung
,
A. T.
Rice
and
P. R.
Berger
,
Applied physics letters
,
83
,
3308
3310
(
2003
).
5.
T. A.
Growden
,
Zh.
Weidong
,
E. R.
Brown
,
D. F.
Storm
,
K.
Hansen
,
P.
Fakhimi
,
D. J.
Meyer
and
P. R.
Berger
,
Applied physics letters
,
112
,
033508
(
2018
).
6.
T. A.
Growden
,
E. M.
Cornuelle
,
D. F.
Storm
,
W.
Zhang
,
E. R.
Brown
,
L. M.
Whitaker
,
J. W.
Daulton
,
R.
Molnar
,
D. J.
Meyer
and
P. R.
Berger
, Cite as:
Appl. Phys. Lett.
114
,
203503
(
2019
).
7.
S.
Zi
,
Physics of semiconductor devices.
1973
,
110
116
.
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