We studied the growth and electronic structure of the ZnTe/CdTe(100) interface with angle‐resolved synchrotron radiation photoemission (ARPES) and reflection high energy electron diffraction (RHEED). RHEED patterns during the growth of ZnTe layers on the CdTe(100) substrate showed that the initial ∼16 Å grows in registry. After this pseudomorphic 16 Å layer, the next 120 Å grows with defects to relieve the 6.6% strain between ZnTe and CdTe. After ∼140 Å, the ZnTe layers are relaxed. ARPES taken near the Brillouin zone center gave a valance band offset ΔEv=0.14 eV, with the ZnTe valence band maximum (VBM) higher than the CdTe VBM.
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© 1992 American Institute of Physics.
1992
American Institute of Physics
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