Preparation and properties of perovskite‐related single crystals of NdGaO3, NdyPr1−yGaO3 and LaAl1−xGaxO3 as substrates for superconducting films of Yba2Cu3O7−δ and Pb2Sr2(Y,Ca)Cu3O8+δ have been studied. LaAl1−xGaxO3 single crystals up to 4.5×4×2mm3 have been grown from PbO‐MoO3–B2O3 flux. Powder x‐ray diffraction was used to determine x values which were 0.16, 0.19, and 0.80 and the lattice mismatch between substrate and film is about half that for LaAlO3 and LaGaO3. NdGaO3 and NdyPr1−yGaO3 single crystals have been grown from a similar flux in the temperature range 1260–1080 °C so as to avoid the cubic to orthorhombic phase transition at 1350°. Twin‐free crystals up to 4×4×2 mm3 have been obtained. The lattice constants of gallates suitable for depositing films of both YBa2Cu3O7−δ and Pb2Sr2(Y/Ca)Cu3O8+δ on (001) and (110) planes are investigated.
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1 April 1992
Superconductivity and its applications
24−26 Sep 1991
Buffalo, New York (USA)
Research Article|
April 01 1992
Single crystal growth and properties of NdGaO3, NdyPr1−yGaO3 and LaAl1−xGaxO3 as substrates for high temperature superconductors
H. Dabkowska;
H. Dabkowska
McMaster University, Hamilton, Ontario, L8S 4M1, Canada
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A. Dabkowski;
A. Dabkowski
McMaster University, Hamilton, Ontario, L8S 4M1, Canada
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J. E. Greedan;
J. E. Greedan
McMaster University, Hamilton, Ontario, L8S 4M1, Canada
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R. Hughes;
R. Hughes
McMaster University, Hamilton, Ontario, L8S 4M1, Canada
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Y. Lu;
Y. Lu
McMaster University, Hamilton, Ontario, L8S 4M1, Canada
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D. Poulin;
D. Poulin
McMaster University, Hamilton, Ontario, L8S 4M1, Canada
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J. Preston;
J. Preston
McMaster University, Hamilton, Ontario, L8S 4M1, Canada
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T. Strach;
T. Strach
McMaster University, Hamilton, Ontario, L8S 4M1, Canada
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T. Timusk
T. Timusk
McMaster University, Hamilton, Ontario, L8S 4M1, Canada
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AIP Conf. Proc. 251, 102–107 (1992)
Citation
H. Dabkowska, A. Dabkowski, J. E. Greedan, R. Hughes, Y. Lu, D. Poulin, J. Preston, T. Strach, T. Timusk; Single crystal growth and properties of NdGaO3, NdyPr1−yGaO3 and LaAl1−xGaxO3 as substrates for high temperature superconductors. AIP Conf. Proc. 1 April 1992; 251 (1): 102–107. https://doi.org/10.1063/1.42069
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