Effect of aluminum impurities on some properties of amorphous As₂Se₃ thin films Available to Purchase

In this paper some structural and electrical properties of pure arsenic selenide (As₂Se₃) thin films with aluminum impurities studied (Al) in ratios (1,2 and, 3) % were deposited on glass substrate at room temperature and with a thickness of (400 ±20) nm with deposition rate (1nm/s) by using thermal evaporation technology under vacuum pressure (10⁻⁵ mbar). Through the results of X-ray examinations of the prepared films before and after doping, it found that all films have an amorphous structure. Transmission spectra FTIR confirms the presence of an absorption peaks in the middle region of the infrared, atomic force microscopy (AFM) tests show an increase in the rate of surface roughness with an increase in impurities. Hall Effect measurements confirm that the continuous electrical conductivity of As₂Se₃ thin films is positive (p-type) and converted to negative (n-type) when increase in the percentage of Al impurities.