Computational experiment in emitting nanostructures metal - Metal oxide under the bombing influence in a He-Ne mixture

Surface and volume modification processes computer simulation for Al – Al₂O₃, Be–BeO, Ti – TiO₂ nanostructures under the ion bombardment action has been carried out. The ion implantation-initiated processes by ion bombardment in a He-Ne mixture is analysed. Modeling of ion implantation using Maple computer mathematics into nanolayers of metal-dielectric structures was performed for a He-Ne discharge, taking into account the available experimental data obtained by various scientific schools, including with the participation of the authors of this work. The obtained mathematical calculated dependences of the depth distribution of the Al – Al₂O₃, Be – BeO, and Ti – TiO₂ dielectric layers depending on the energy of the implanted He⁺ and Ne⁺ ions are important for creating long-life electron sources for gas-discharge lasers and other nanostructures, where their production is associated with measurements in the nanoscale range. and computer modeling of nanoobjects. It is shown that the process of ion doping of a metal oxide on a metal substrate leads to a modification of the band diagram of dielectric-metal nanostructures. Moreover, at an energy of He⁺ and Ne⁺ equal to 100 eV, the penetration depth of helium ions into Al – Al₂O₃, Ti – TiO₂, and Be – BeO is 12.24 nm, 8.79 nm, and 3.76 nm, respectively, and for neon ions - 0, 99 nm, 0.64 nm and 0.38 nm. Consequently, the distribution profile of intercalated ions in a He-Ne discharge is as follows: neon ions occur mainly in the near-surface layer of the dielectric film of the nanostructure, while helium ions penetrate into its bulk to a depth comparable to the film thickness. In this case, the maximum of the distribution of bombarding ions is located closer to the surface of the dielectric film, depending on its properties in the series: BeO – TiO₂ − Al₂O₃, which predetermines a decrease in the thickness of the dielectric in this type of nanostructures.