An investigation into the effect of Sb dopant on the structural, electrical and photoconductive properties of SnSe thin films Available to Purchase

Tin Selenide (SnSe) and Sb-doped SnSe thin films with various Sb concentration (1.5, 2.5 and 3.5 wt.%), were prepared by flash evaporation technique on glass substrate of temperature 503K. X-ray diffraction reveals a showed that deposited films have a strong preferential orientation growth along the crystallographic plans (111). The morphology studies carried out using atomic force microscopy AFM endorsed that the films surface is a homogeneous in nature. The electrical properties was investigated as function of Sb wt.% doping. The results showed that the electrical conductivity increase with increases doping concentration for Sb=1.5%,2.5% and then it decreases to Sb=3.5% while activation energies showed opposite trend. From the photoconductive studies, the Sb-doped films exhibited sensitivity to incident light especially in Sb=2.5%.