The present work explains the structural analysis of Se-rich (Ge20Se80)90Sb10 glassy system prepared using melt-quenching technique. Thin films of (Ge20Se80)90Sb10 are prepared on well-cleaned glass substrates using vacuum evaporation technique. All the structural characterizations for (Ge20Se80)90Sb10 system are performed at room temperature (298 K). XRD spectrum verifies the amorphous nature of as-prepared sample with the possibility of short-range ordering in the sample. The spherical granular morphology of the thin film has been studied using FE-SEM. The purity and the precise composition of the thin films are determined using EDS. The distribution of the constituent elements is investigated using elemental mapping. Raman studies help in understanding the basic structural units comprising the prepared sample.
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5 August 2021
ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2020): 5th National e-Conference on Advanced Materials and Radiation Physics
9–11 November 2020
Longowal, India
Research Article|
August 05 2021
Structural analysis of selenium-rich (Ge20Se80)90Sb10 chalcogenide glassy system Available to Purchase
Jasmeen Kang;
Jasmeen Kang
a
1
Centre of Advanced Study in Physics, Department of Physics, Panjab University
, Chandigarh, India
, 160014aCorresponding author: [email protected]
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R. K. Kotnala;
R. K. Kotnala
2
CSIR-National Physical Laboratory
, Dr. K. S. Krishnan Road, New Delhi, India
, 110012
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S. K. Tripathi
S. K. Tripathi
1
Centre of Advanced Study in Physics, Department of Physics, Panjab University
, Chandigarh, India
, 160014
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Jasmeen Kang
1,a
R. K. Kotnala
2
S. K. Tripathi
1
1
Centre of Advanced Study in Physics, Department of Physics, Panjab University
, Chandigarh, India
, 160014
2
CSIR-National Physical Laboratory
, Dr. K. S. Krishnan Road, New Delhi, India
, 110012
aCorresponding author: [email protected]
AIP Conf. Proc. 2352, 020020 (2021)
Citation
Jasmeen Kang, R. K. Kotnala, S. K. Tripathi; Structural analysis of selenium-rich (Ge20Se80)90Sb10 chalcogenide glassy system. AIP Conf. Proc. 5 August 2021; 2352 (1): 020020. https://doi.org/10.1063/5.0052994
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