One of the major downsides of traditional Metal Oxide Silicon Field Effect Transistor (MOSFET) is scaling which hinders designing of energy efficient devices; to get over this constraint Carbon Nano Tube Field Effect Transistor (CNTFET) is used. This paper presents the designing of energy efficient logic gates using CNTFET. The structure of CNTFET is almost similar to that of MOSFET except it comprises of single or group of nanotubes as the channel material. Using Stanford CNTFET model, designing of CNTFET based logic gates are manifested. For design and simulation HSPICE software is used in accordance of Stanford CNTFET model. Power consumption and delay of logic gates are observed, while changing the operating voltage keeping temperature constant. Figure of Merit (FOM) is computed by replacing MOSFET with CNTFET.
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5 August 2021
ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2020): 5th National e-Conference on Advanced Materials and Radiation Physics
9–11 November 2020
Longowal, India
Research Article|
August 05 2021
Design of energy efficient logic gates using CNTFET
Nikita Mohanta;
Nikita Mohanta
a)
1
Department of Physics, Maulana Azad National Institute of Technology
, Bhopal, Madhya Pradesh, India
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Prashant Yadav;
Prashant Yadav
b)
2
Department of Electronics and Instrumentation, SGSITS
, Indore, Madhya Pradesh, India
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Jyoti Rani
Jyoti Rani
c)
1
Department of Physics, Maulana Azad National Institute of Technology
, Bhopal, Madhya Pradesh, India
c)Corresponding author: jyoti.iitr@gmail.com
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c)Corresponding author: jyoti.iitr@gmail.com
AIP Conf. Proc. 2352, 020019 (2021)
Citation
Nikita Mohanta, Prashant Yadav, Jyoti Rani; Design of energy efficient logic gates using CNTFET. AIP Conf. Proc. 5 August 2021; 2352 (1): 020019. https://doi.org/10.1063/5.0053368
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